INTRODUCTION
In recent times, there has been an intense exploration of the Tunneling field effects transistors. This is because it has been discovered to have the potential to offer a way out of many concerns, especially the power concerns, in nanoelectronics. “Graphene nanoribbon was recently discovered and has been deemed ideal for tunneling FETs,” [1]. For graphene nanoribbons tunneling transistors, the subthreshold swing has been investigated to be a nonlinear function of temperature. The graphene nanoribbon has been declared as the best candidate for tunneling field effect transistor owing to its compatibility with planar processing, direct and narrow band gap, and low ...
