Summary
The given article is about a BiFET GSM-EDGE, which is a power amplifier that consists of a built in circuit to limit current. The collector current is limited to a predetermined level of the value 2.1 Amperes by having a bias circuit incorporated in the power stage of the amplifier thus limiting the HBT cells base current. The power amplifier ruggedness is increased by the given novel scheme in case it is subjected to much mismatch conditions. Furthermore, the matched loads of EDGE and GMSK PAE are maintained in a linear manner. In this paper, current limiting capabilities in ...
